Philips
NE5532 - Internally-compensated dual low noise operational amplifier
INTEGRATED CIRCUITS
NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier
Product specification IC11 Data Handbook 1997 Sept
(29 views)
Sanyo
LC378000RP - Internally Synchronized Silicon Gate 8M (1 /048 /576-word x 8-bit / 524 /288-word x 16-bit) Mask ROM
Ordering number : EN*5793
CMOS IC
LC378000RP
Internally Synchronized Silicon Gate 8M (1,048,576word × 8-bit, 524,288-word × 16-bit) Mask ROM
Prelimi
(8 views)
ON Semiconductor
NE5532 - Internally Compensated Dual Low Noise Operational Amplifier
NE5532, SA5532, SE5532, NE5532A, SE5532A
Internally Compensated
Dual Low Noise
Operational Amplifier
The 5532 is a dual high-performance low noise op
(8 views)
ON Semiconductor
NE5532A - Internally Compensated Dual Low Noise Operational Amplifier
NE5532, SA5532, SE5532, NE5532A, SE5532A
Internally Compensated
Dual Low Noise
Operational Amplifier
The 5532 is a dual high-performance low noise op
(7 views)
Philips
NE5532A - Internally-compensated dual low noise operational amplifier
INTEGRATED CIRCUITS
NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier
Product specification IC11 Data Handbook 1997 Sept
(6 views)
STMicroelectronics
GD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$%
7$%
,3$.
72
STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - pr
(6 views)
Philips
SA5532 - Internally-compensated dual low noise operational amplifier
INTEGRATED CIRCUITS
NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier
Product specification IC11 Data Handbook 1997 Sept
(5 views)
SUMITOMO
ELM7179-10F - C-Band Internally Matched FET
ELM7179-10F
C-band Internally Matched FET
FEATURES ・High Output Power : P1dB=40.5dBm(typ.) ・High Gain : G1dB=9.0dB(typ.) ・High P.A.E. : ηadd=38%(typ.)
(5 views)
SUMITOMO
FLM1415-8F - Ku-Band Internally Matched FET
FLM1415-8F
Ku-Band Internally Matched FET
FEATURES •High Output Power: P1dB=39.0dBm(Typ.) •High Gain: G1dB=5.0dB(Typ.) •High PAE: ηadd=25%(Typ.) •Broa
(5 views)
Burr-Brown Corporation
ISO113 - Low-Cost/ High-Voltage/ Internally Powered OUTPUT ISOLATION AMPLIFIER
®
ISO113
ISO 113
Low-Cost, High-Voltage, Internally Powered OUTPUT ISOLATION AMPLIFIER
FEATURES
q SELF-CONTAINED ISOLATED SIGNAL AND OUTPUT POWER q
(4 views)
ON Semiconductor
SA5532 - Internally Compensated Dual Low Noise Operational Amplifier
NE5532, SA5532, SE5532, NE5532A, SE5532A
Internally Compensated
Dual Low Noise
Operational Amplifier
The 5532 is a dual high-performance low noise op
(4 views)
Eudyna Devices
FLM3742-18F - C-Band Internally Matched FET
www.DataSheet4U.com
FLM3742-18F
C-Band Internally Matched FET
FEATURES
• • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.5
(4 views)
Advanced Semiconductor Business
ACL4275T2 - Internally Matched LNA Module
plerowTM ACL4275T2
www.DataSheet4U.com
Internally Matched LNA Module Description
The plerowTM ACL-series is the compactly designed surface-mount modu
(4 views)
Excelics Semiconductor
EIC1010A-12 - Internally Matched Power FET
www.DataSheet4U.com
EIC1010A-12
ISSUED: 07/24/2007
10.0-10.25 GHz 12-Watt Internally Matched Power FET
Excelics
FEATURES
• • • • • • 10.0-10.25GHz
(4 views)
ASB
ALE2500T2 - Internally Matched LNA
plerowTM ALE2500T2
Internally Matched LNA Module Features
· S21 = 24.9 dB@2300 MHz = 23.1 dB@2700 MHz · NF of 0.85 dB over Frequency · Unconditionally
(4 views)
SUMITOMO
FLM3742-8F - C-Band Internally Matched FET
FLM3742-8F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37%
(4 views)
SUMITOMO
FLM4450-4F - C-Band Internally Matched FET
FLM4450-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37%
(4 views)
SUMITOMO
ELM5964-16F - C-Band Internally Matched FET
FEATURES High Output Power: P1dB=42.5dBm (Typ) High Gain: G1dB=10.0dB (Typ.) High PAE: add=40 %( Typ.) Frequency Band: 5.9~6.4GHz Impedance
(4 views)
SUMITOMO
FLM7785-45F - C-Band Internally Matched FET
FLM7785-45F
C-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Br
(4 views)
SUMITOMO
FLM1011-6F - X / Ku-Band Internally Matched FET
FLM1011-6F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE:
(4 views)