IPB120N10S4-05 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPB120N10S4-05 FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Sour

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IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID • N-channe

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