IPD046N08N5 MOSFET OptiMOSTM5Power-Transistor,8.
IPD046N08N5 - MOSFET
IPD046N08N5 MOSFET OptiMOSTM5 Power-Transistor, 80 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on.IPD046N08N5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.6mΩ ·Enhancement mode: ·100% avalanc.