IPD046N08N5 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.6mΩ ·Enhancement mode: ·100% avalanc

(14 views)

IPD046N08N5 MOSFET OptiMOSTM5 Power-Transistor, 80 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on

(8 views)