IPD110N12N3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2

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