IPD60R280P7S Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD60R280P7S，IIPD60R280P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avala

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IPD60R280P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE

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