IPD60R600E6 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.2 Final Powe

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