IPD65R1K4C6 Datasheet | Specifications & PDF Download

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.0 Final In

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isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch

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