IPD65R380E6 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalan

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MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.2 Final Power Ma

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