GIM@?N
+ =L 9 D- PA <= 1 =E A ;G F
IPD65R600C6 - Power Transistor
GIM@?N + =L 9 D- PA <= 1 =E A ;G FIPD65R600C6 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.