IPD65R600C6 Datasheet | Specifications & PDF Download

IPD65R600C6 Power Transistor

GIM@?N + =L 9 D- PA <= 1 =E A ;G F

GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1 4 G G D + - 1 Y . G O=J2J 9 FK A K L G J '. P

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isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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