IPD65R600E6 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Po

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