MOSFET Metall Oxide Semiconductor Field Effect Tra.
IPD65R600E6 - MOSFET
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Po.IPD65R600E6 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.