IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N1.
Infineon
IPI086N10N3G - Power-Transistor
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.
Infineon
IPI086N10N3 - Power-Transistor
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.
INCHANGE
IPI086N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI086N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.2mΩ ·Enhancement mode ·F.
