Infineon
IPI086N10N3G - Power-Transistor
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(
Rating:
1
★
(3 votes)
Infineon
IPI086N10N3 - Power-Transistor
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(
Rating:
1
★
(3 votes)
INCHANGE
IPI086N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI086N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.2mΩ ·Enhancement mode ·F
Rating:
1
★
(3 votes)
