IPI600N25N3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤60mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

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IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on)

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IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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