IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOS.
IPP126N10N3G - Power-Transistor
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.IPP126N10N3 - Power-Transistor
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.IPP126N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP126N10N3,IIPP126N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.6mΩ ·Enhan.