IPW60R120P7 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤120mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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IPW60R120P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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