IPW60R180C7 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R180C7 IIPW60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤180mΩ ·Enhance

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPW60R180C7 Data Sheet Rev. 2.0 Final Power Man

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