IPW60R299CP Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤299mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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www.DataSheet4U.com IPW60R299CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated •

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