IPW65R280C6 Datasheet | Specifications & PDF Download

FGK@?L FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 65*M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx65J280=6 >PcP KWTTc Rev. 2.1 @X]P[ H^fTa FP]

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

Rating: 1 ★ (3 votes)