IRF5210L Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology

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l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So

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PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operat

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