PD - 91405C IRF5210S/L HEXFET® Power MOSFET Adva.
International Rectifier
IRF5210L - Power MOSFET
PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operat.
International Rectifier
IRF5210LPBF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So.
INCHANGE
IRF5210L - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology .
