PD - 95397 IRF7509PbF HEXFET® Power MOSFET l G.
International Rectifier
IRF7509PBF-1 - Power MOSFET
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) N-CH 30 0.11 7.8 2.7 P-CH -30 0.2 7.5 -2.0 V Ω nC A IRF7509PbF-1 HEXFET® Power MOSFET N.
International Rectifier
IRF7509PBF - Power MOSFET
PD - 95397 IRF7509PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Pack.