IRF9540NL Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A) ·Advanced trench process technology

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www.DataSheet4U.com PD - 96030 HEXFET® Power MOSFET l l l l l l l l IRF9540NSPbF IRF9540NLPbF VDSS = -100V RDS(on) = 117mΩ Advanced Process Techno

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PD - 91483C IRF9540NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9540S) l Low-profile through-hole (IRF9540L) l 175°C Opera

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