IRFB3006 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3006， IIRFB3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched a

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PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High S

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