IRFB812 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFB812，IIRFB812 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.2Ω ·Enhancement mode ·Fast Switching Spee

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PD -97693 IRFB812PbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET

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