IRFBG20 Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor IRFBG20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 11Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V,

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www.vishay.com IRFBG20 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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