IRFI530N Datasheet | Specifications & PDF Download

IRFI530N HEXFET Power MOSFET

PD - 9.1353A PRELIMINARY IRFI530N D HEXFET® Pow.

PD - 9.1353A PRELIMINARY IRFI530N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS

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HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fu

Rating: 1 ★ (2 votes)