IRFP350LC Datasheet | Specifications & PDF Download

isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :

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HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Q

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