HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultr.
International Rectifier
IRFP350LC - Power MOSFET
HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso.
INCHANGE
IRFP350LC - N-Channel MOSFET
isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :.
Vishay
IRFP350LC - Power MOSFET
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Q.