IRFP440 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :

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PD - 95198 IRFP440PbF • Lead-Free www.DataSheet4U.com www.irf.com 1 4/27/04 IRFP440PbF 2 www.irf.com IRFP440PbF www.irf.com 3 IRFP440PbF

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$GYDQFHG 3RZHU 026)(7 IRFP440 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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AUTOMOTIVE GRADE Features Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche All

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IRFP440B November 2001 IRFP440B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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IRFP440 Data Sheet July 1999 File Number 2089.3 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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IRFP440, SiHFP440 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 3

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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