IRFR3410 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·Enhancement mode: ·100% avalanche te

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Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ

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PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V RDS(on) max 39mΩ ID

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