IRG7PH42UPbF Datasheet | Specifications & PDF Download

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square

(3 views)