International Rectifier
IRG7PH50K10DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10DPbF IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs,
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