
IRG8B08N120KDPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRG8B08N120KDPbF IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V IC = 8A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recover
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