
IRG8P15N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRG8P15N120KDPbF IRG8P15N120KD-EPbF
VCES = 1200V IC = 15A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tS
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