International Rectifier
IRG8P50N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
VCES = 1200V IC = 50A, TC =100°C
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC
Rating:
1
★
(2 votes)
