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IRG8P50N120KD-EPbF Datasheet, Features, Application

IRG8P50N120KD-EPbF INSULATED GATE BIPOLAR TRANSISTOR

  VCES = 1200V IC = 50A, TC =100°C IRG8P50N120K.

International Rectifier
rating-1 5

IRG8P50N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

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