International Rectifier
IRG8P60N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
VCES = 1200V IC = 60A, TC =100°C
IRG8P60N120KDPbF IRG8P60N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC
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