IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipol.
International Rectifier
IRGP4263PBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.