IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar T.
International Rectifier
IRGP4266PBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.