IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insula.
International Rectifier
IRGP4630DPbF - Insulated Gate Bipolar Transistor
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.
Infineon
IRGP4630DPbf - IGBT
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • W.
