IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR T.
Infineon
IRGP4640D-EPbF - Insulated Gate Bipolar Transistor
VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A.
International Rectifier
IRGP4640-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V.
International Rectifier
IRGP4640D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μ.
