
IRGP4790D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4790DPbF IRGP4790D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 5.5µs
(4 views)
IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 9.
IRGP4790D-EPbF Distributor