
IRGR4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs
(5 views)
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated G.
IRGR4610DPBF Distributor