IRGS4045DPBF Datasheet | Specifications & PDF Download

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IRGS4045DPBF Insulated Gate Bipolar Transistor

IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C.

International Rectifier

IRGS4045DPBF - Insulated Gate Bipolar Transistor

IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE.
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