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IRGS4610DPBF Datasheet | Specifications & PDF Download

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IRGS4610DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated G.

International Rectifier

IRGS4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR

 IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs.
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