IXFA102N15T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXFA102N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt

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Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V =

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