IXFA130N10T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vo

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VG

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isc N-Channel MOSFET Transistor IXFA130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vol

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Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP13

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