IXFH150N20T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXFH150N20T ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(M

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Advance Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT150N20T IXFH150N20T VDSS = 200V ID25 = 150A ≤ RDS(on) 15mΩ N-Channel Enhanceme

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