IXFK360N10T Datasheet | Specifications & PDF Download

Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N1

(22 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.9mΩ(Max)@VGS=10V

(16 views)