Advance Technical Information GigaMOSTM Trench Hi.
IXYS
IXFK420N10T - Power MOSFET
Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T I.
INCHANGE
IXFK420N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max)@VGS=10V .