IXYS
IXGR32N170H1 - High Voltage IGBT
High Voltage IGBT with Diode
Electrically Isolated Tab
Preliminary Data Sheet
IXGR 32N170H1
IVCC2E5S VCE(sat) tfi(typ)
= 1700 V = 38 A = 3.5 V = 25
(6 views)
High Voltage IGBT with Diode Electrically Isolated.
IXYS
IXGR32N170H1 Distributor
