IXTA10N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740

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