IXTA160N085T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTA160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on)

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