IXTA180N085T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTA180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo

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TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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