Preliminary Technical Information TrenchMVTM Powe.
IXYS Corporation
IXTA180N085T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
IXYS Corporation
IXTA180N085T7 - Power MOSFET
TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ .
INCHANGE
IXTA180N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTA180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.
